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71V3559S75BQ 165 TBGA Memory Electronic Circuit Components Original

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Attributes

Component & PartType
NewManufacturing Date Code
4.5MbitMemory Size
ChinaPlace of Origin
BulkPackaging Type
MemoryApplication
Features:Ic Electronic Components
Memory Type:VOLATILE
Technology:SRAM - Synchronous, SDR (ZBT)
Voltage - Supply:3.135V ~ 3.465V
Clock Frequency:-
Memory Organization:256K x 18
Write Cycle Time - Word, Page:-
Memory Interface:Parallel

Key attributes

Type
Component & Part
Manufacturing Date Code
New
Memory Size
4.5Mbit
Place of Origin
China
Packaging Type
Bulk
Application
Memory
Features
Ic Electronic Components
Memory Type
VOLATILE
Technology
SRAM - Synchronous, SDR (ZBT)
Voltage - Supply
3.135V ~ 3.465V
Clock Frequency
-
Memory Organization
256K x 18
Write Cycle Time - Word, Page
-
Memory Interface
Parallel

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
35 - 3034 pieces
$431
>= 3035 pieces
$216

Variations

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