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Authorized Distributor DF80R12W2H3B11BOMA1 Module Transistors Electronic Chips Component

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$26.47
100-3,099 pieces
$13.24
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

DF80R12W2H3B11BOMA1

Brand Name

Original

Description

IGBT MODULE

Place of Origin

China

Package / Case

Module

Operating Temperature

-40°C ~ 150°C (TJ)

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Item subtotal
$0.00
Shipping total
To be negotiated
Subtotal
$0.00

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Key attributes

Manufacturer Part Number
DF80R12W2H3B11BOMA1
Brand Name
Original
Description
IGBT MODULE
Place of Origin
China
Package / Case
Module
Operating Temperature
-40°C ~ 150°C (TJ)
Series
-
Mfg Date Code
NEW
Current - Collector (Ic) (Max)
50 A
Voltage - Collector Emitter Breakdown (max)
1200 V
Current - Collector Cutoff (Max)
1 mA
Power - Max
190 W
IGBT Type
-
Configuration
Dual Boost Chopper
Input Capacitance (Cies) @ Vce
2.35 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Mounting Type
Chassis Mount
Package
Bulk
IGBT Type
-
Configuration
Dual Boost Chopper
Current - Collector (Ic) (Max)
50 A
Power - Max
190 W
Input
Standard

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning