Authorized Distributor Electronic Chips Component EM128LXQAB313IS1T 24 TBGA Memory
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Attributes
MRAM (Magnetoresistive RAM)Technology
Non-VolatileMemory Type
16M x 8Memory Organization
Component & PartType
128MbitMemory Size
ChinaPlace of Origin
Packaging Type:Bulk
Application:Memory
Features:Electronic Componente
Voltage - Supply:1.65V ~ 2V
Clock Frequency:133 MHz
Write Cycle Time - Word, Page:-
Memory Interface:SPI - Quad I/O
Key attributes
Technology
MRAM (Magnetoresistive RAM)
Memory Type
Non-Volatile
Memory Organization
16M x 8
Type
Component & Part
Memory Size
128Mbit
Place of Origin
China
Packaging Type
Bulk
Application
Memory
Features
Electronic Componente
Voltage - Supply
1.65V ~ 2V
Clock Frequency
133 MHz
Write Cycle Time - Word, Page
-
Memory Interface
SPI - Quad I/O
Packaging and delivery
Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
1 - 3,000 pieces
$9119
≥ 3,001 pieces
$4560
Variations
Select nowSpecification
EM128LXQAB313IS1T
Shipping
Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.
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