Authorized Distributor Electronic Circuit Components MR2A08AMYS35 44 TSOP Memory
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Attributes
Component & PartType
4MbitMemory Size
ChinaPlace of Origin
TrayPackaging Type
MemoryApplication
Circuit IntegratedFeatures
Memory Type:Non-Volatile
Technology:MRAM (Magnetoresistive RAM)
Voltage - Supply:3V ~ 3.6V
Clock Frequency:-
Memory Organization:512K x 8
Write Cycle Time - Word, Page:35ns
Memory Interface:Parallel
Key attributes
Type
Component & Part
Memory Size
4Mbit
Place of Origin
China
Packaging Type
Tray
Application
Memory
Features
Circuit Integrated
Memory Type
Non-Volatile
Technology
MRAM (Magnetoresistive RAM)
Voltage - Supply
3V ~ 3.6V
Clock Frequency
-
Memory Organization
512K x 8
Write Cycle Time - Word, Page
35ns
Memory Interface
Parallel
Packaging and delivery
Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg
Lead time
Product descriptions from the supplier
Warning/Disclaimer
California Proposition 65 Consumer WarningView more
1 - 3,000 pieces
$1917
>= 3,001 pieces
$959
Variations
Select nowSpecification
MR2A08AMYS35
Shipping
Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.
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