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BSS84XHZGG2CR DFN1010-3W Transistors Electronics Component Authorized Distributor

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$0.49
100-3,099 pieces
$0.25
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

BSS84XHZGG2CR

Brand Name

Original

Description

MOSFET P-CH 60V 230MA DFN1010-3W

Place of Origin

China

Package / Case

DFN1010-3W

Operating Temperature

150°C (TJ)

Shipping
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Item subtotal
$0.00
Shipping total
To be negotiated
Subtotal
$0.00

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Key attributes

Manufacturer Part Number
BSS84XHZGG2CR
Brand Name
Original
Description
MOSFET P-CH 60V 230MA DFN1010-3W
Place of Origin
China
Package / Case
DFN1010-3W
Operating Temperature
150°C (TJ)
Series
-
Mfg Date Code
NEW
FET Type
P-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
230mA (Ta)
Rds On (Max) @ Id, Vgs
5.3Ohm @ 230mA, 10V
Vgs(th) (Max) @ Id
2.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
34 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
±20V
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning