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Buy Electronics Components Online SISS66DN-T1-GE3 PowerPAK 1212-8S Transistors In Stock

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$1.12
100-3,099 pieces
$0.56
≥3,100 pieces

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Key attributes

Manufacturer Part Number

SISS66DN-T1-GE3

Brand Name

Original

Description

MOSFET N-CH 30V 49.1/178.3A PPAK

Place of Origin

China

Package / Case

PowerPAK 1212-8S

Operating Temperature

-55°C ~ 150°C (TJ)

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$0.00
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
SISS66DN-T1-GE3
Brand Name
Original
Description
MOSFET N-CH 30V 49.1/178.3A PPAK
Place of Origin
China
Package / Case
PowerPAK 1212-8S
Operating Temperature
-55°C ~ 150°C (TJ)
Series
TrenchFET Gen IV
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
Schottky Diode (Body)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
49.1A (Ta), 178.3A (Tc)
Rds On (Max) @ Id, Vgs
1.38mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
85.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
3327 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Vgs (Max)
+20V, -16V
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning