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Buy Electronics Components Online TO-220FM R6509ENXC7G Transistors In Stock

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$1.38
100-3,099 pieces
$0.69
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

R6509ENXC7G

Brand Name

Original

Description

650V 9A TO-220FM, LOW-NOISE POWE

Place of Origin

China

Package / Case

TO-220FM

Operating Temperature

150°C (TJ)

Shipping

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Item subtotal
$0.00
Shipping total
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
R6509ENXC7G
Brand Name
Original
Description
650V 9A TO-220FM, LOW-NOISE POWE
Place of Origin
China
Package / Case
TO-220FM
Operating Temperature
150°C (TJ)
Series
-
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
9A (Ta)
Rds On (Max) @ Id, Vgs
585mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id
4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs
24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
430 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Through Hole
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

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Warning/Disclaimer
California Proposition 65 Consumer Warning

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