Attributes
STGWA80H65DFBModel Number
IGBT Transistor, NPN PNP Power TransistorsType
Original BrandBrand Name
Throught HolePackage Type
High power Audio Power Amplifier Transistor, TRANS NPN 650 V 120 A 469 WDescription
JapanPlace of Origin
Package / Case:Through Hole TO-247
Operating Temperature:150°C, 150°C (TJ)
Series:STGWA80H65DFB Transistors
D/C:New
Application:Other
Supplier Type:Original Manufacturer
Cross Reference:Pls Contact Ours
Media Available:Datasheet
Current - Collector (Ic) (Max):120 A
Voltage - Collector Emitter Breakdown (max):650V
Vce Saturation (Max) @ Ib, Ic:3V @ 800mA, 8A
Current - Collector Cutoff (Max):5uA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:55 @ 1A, 5V, 80
Power - Max:469W
Frequency - Transition:25MHz
Mounting Type:Through Hole, STGWA80H65DFB Amplifier Transistor
FET Feature:Silicon Carbide (SiC)
Frequency:Original standard
Current Rating (Amps):120A
Power - Output:469 Watt
Voltage - Rated:650 Volts
Configuration:Three Phase
Input Capacitance (Cies) @ Vce:Original standard
Voltage - Output:650V
Transistor Type:Audio Power Transistor
Condition:ROSH
Service:BOM List Service
Warranty:1 Year
MOQ:1pcs
Lead time:3-5working Day
Quality:100% Original 100% Brand
Payment:Paypal\TT\Western Union\Trade Assurance
Shipping:DHL\UPS\Fedex\TNT\EMS\ePacket
Inquire:24 Hour Online
Keywords:Original transistor STGWA80H65DFB IGBT Power Transistor
