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Components Electronic PG-TO263-3-2 IPB120N06S4H1ATMA2 Transistors Original One Stop Service

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$0.77
100-3,099 pieces
$0.39
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

IPB120N06S4H1ATMA2

Brand Name

Original

Description

MOSFET N-CH 60V 120A TO263-3

Place of Origin

China

Package / Case

PG-TO263-3-2

Operating Temperature

-55°C ~ 175°C (TJ)

Shipping

Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.
Item subtotal
$0.00
Shipping total
To be negotiated
Subtotal
$0.00

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Key attributes

Manufacturer Part Number
IPB120N06S4H1ATMA2
Brand Name
Original
Description
MOSFET N-CH 60V 120A TO263-3
Place of Origin
China
Package / Case
PG-TO263-3-2
Operating Temperature
-55°C ~ 175°C (TJ)
Series
OptiMOS
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Rds On (Max) @ Id, Vgs
2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs
270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
21900 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

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California Proposition 65 Consumer Warning