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Electronic Chips Component Transistors Module GCMX080A120B2H2P Manufacturer Channel

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$24.22
100-3,099 pieces
$12.11
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

GCMX080A120B2H2P

Brand Name

Original

Description

1200V, 80M SIC MOSFET FULL BRIDG

Place of Origin

China

Package / Case

Module

Operating Temperature

-40°C ~ 175°C (TJ)

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$0.00
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$0.00

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Key attributes

Manufacturer Part Number
GCMX080A120B2H2P
Brand Name
Original
Description
1200V, 80M SIC MOSFET FULL BRIDG
Place of Origin
China
Package / Case
Module
Operating Temperature
-40°C ~ 175°C (TJ)
Series
QSiC
Mfg Date Code
NEW
Power - Max
119W (Tc)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
27A (Tc)
Rds On (Max) @ Id, Vgs
100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
58nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
1400pF @ 800V
Configuration
4 N-Channel (Full Bridge)
Mounting Type
Chassis Mount
Package
Box
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Full Bridge)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning