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Electronics Component IXTA3N100D2 TO-263AA Transistors Manufacturer Channel

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$5.31
100-3,099 pieces
$2.66
≥3,100 pieces

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Key attributes

Manufacturer Part Number

IXTA3N100D2

Brand Name

Original

Description

MOSFET N-CH 1000V 3A TO263

Place of Origin

China

Package / Case

TO-263AA

Operating Temperature

-55°C ~ 150°C (TJ)

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$0.00
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
IXTA3N100D2
Brand Name
Original
Description
MOSFET N-CH 1000V 3A TO263
Place of Origin
China
Package / Case
TO-263AA
Operating Temperature
-55°C ~ 150°C (TJ)
Series
Depletion
Mfg Date Code
NEW
FET Type
N-Channel, Depletion Mode
FET Feature
-
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Rds On (Max) @ Id, Vgs
5.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
37.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
±20V
Mounting Type
Surface Mount
Package
Tube
FET Type
N-Channel, Depletion Mode
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning