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Electronics Component MSCSM170HRM11NG Module Transistors Manufacturer Channel

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$464.88
100-3,099 pieces
$232.45
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

MSCSM170HRM11NG

Brand Name

Original

Description

MOSFET 4N-CH 1700V/1200V 226A

Place of Origin

China

Package / Case

Module

Operating Temperature

-40°C ~ 175°C (TJ)

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$0.00
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Key attributes

Manufacturer Part Number
MSCSM170HRM11NG
Brand Name
Original
Description
MOSFET 4N-CH 1700V/1200V 226A
Place of Origin
China
Package / Case
Module
Operating Temperature
-40°C ~ 175°C (TJ)
Series
-
Mfg Date Code
NEW
Power - Max
1.012kW (Tc), 662W (Tc)
FET Feature
-
Drain to Source Voltage (Vdss)
1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
226A (Tc), 163A (Tc)
Rds On (Max) @ Id, Vgs
11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id
3.2V @ 10mA, 2.8V @ 6mA
Gate Charge (Qg) (Max) @ Vgs
712nC @ 20V, 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
13200pF @ 1000V, 6040pF @ 1000V
Configuration
4 N-Channel (Three Level Inverter)
Mounting Type
Chassis Mount
Package
Tube
Technology
Silicon Carbide (SiC)
Configuration
4 N-Channel (Three Level Inverter)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning