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Electronics Component PG-TO262-3 IPI034NE7N3 G Transistors BOM IC In Stock

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$0.91
100-3,099 pieces
$0.46
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

IPI034NE7N3 G

Brand Name

Original

Description

MOSFET N-CH 75V 100A TO262-3

Place of Origin

China

Package / Case

PG-TO262-3

Operating Temperature

-55°C ~ 175°C (TJ)

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$0.00
Shipping total
To be negotiated
Subtotal
$0.00

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Key attributes

Manufacturer Part Number
IPI034NE7N3 G
Brand Name
Original
Description
MOSFET N-CH 75V 100A TO262-3
Place of Origin
China
Package / Case
PG-TO262-3
Operating Temperature
-55°C ~ 175°C (TJ)
Series
OptiMOS
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
3.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
3.8V @ 155µA
Gate Charge (Qg) (Max) @ Vgs
117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
8130 pF @ 37.5 V
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
-
Mounting Type
Through Hole
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning