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Electronics Component Transistors 8-PowerVDFN DMT35M8LDG-7 Original

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$1.05
100-3,099 pieces
$0.53
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

DMT35M8LDG-7

Brand Name

Original

Description

MOSFET 2N-CH 30V 17A PWRDI3333

Place of Origin

China

Package / Case

8-PowerVDFN

Operating Temperature

-55°C ~ 150°C (TJ)

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$0.00
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
DMT35M8LDG-7
Brand Name
Original
Description
MOSFET 2N-CH 30V 17A PWRDI3333
Place of Origin
China
Package / Case
8-PowerVDFN
Operating Temperature
-55°C ~ 150°C (TJ)
Series
-
Mfg Date Code
NEW
Power - Max
980mW (Ta), 2W (Tc)
FET Feature
-
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
17A (Ta), 15.3A (Ta)
Rds On (Max) @ Id, Vgs
4.7mOhm @ 20A, 10V, 5.8mOhm @ 18A, 10V
Vgs(th) (Max) @ Id
1.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
22.7nC @ 10V, 16.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
1510pF @ 15V, 1032pF @ 15V
Configuration
2 N-Channel (Dual) Asymmetrical
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual) Asymmetrical

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning