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HT High Power SGT40N60FD2P7 40N60NPFDPN 40N60 40N60FD2 40N60FD 40A600V Transistors IGBT in Stock 40N60FD2

No reviews yetbillboard#12 most popular in Industrial Grade Transistors
$5
Minimum order quantity: 1 piece

Quantity

Key attributes

Manufacturer Part Number

SGT40N60FD2P7

Type

IGBT Transistor

Brand Name

SL

Package Type

TO-247

Description

IGBT

Place of Origin

Guangdong, China

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Key attributes

Manufacturer Part Number
SGT40N60FD2P7
Type
IGBT Transistor
Brand Name
SL
Package Type
TO-247
Description
IGBT
Place of Origin
Guangdong, China
Package / Case
TO-3P
Mfg Date Code
2026
Application
Industrial
Supplier Type
Original Manufacturer
Media Available
Datasheet
Voltage - Collector Emitter Breakdown (max)
600V
DC Current Gain (hFE) (Min) @ Ic, Vce
0
Resistor - Base (R1)
Right
Resistor - Emitter Base (R2)
Right
FET Feature
Not ApplicableRight
Drain to Source Voltage (Vdss)
Right
Rds On (Max) @ Id, Vgs
Right
Vgs(th) (Max) @ Id
Right
Input Capacitance (Ciss) (Max) @ Vds
Right
Frequency
Right
Current Rating (Amps)
40A
Noise Figure
Right
Power - Output
Right
Voltage - Rated
600V
Drive Voltage (Max Rds On, Min Rds On)
Right
Vgs (Max)
Right
IGBT Type
SGT40N60FD2P7
Configuration
Single
Vce(on) (Max) @ Vge, Ic
Right
Input
Pass
NTC Thermistor
Pass
Voltage - Breakdown (V(BR)GSS)
Pass
Current - Drain (Idss) @ Vds (Vgs=0)
Pass
Current Drain (Id) - Max
40A
Voltage - Cutoff (VGS off) @ Id
Pass
Resistance - RDS(On)
Pass
Voltage - Output
Pass
Voltage - Offset (Vt)
Pass
Current - Gate to Anode Leakage (Igao)
Pass
Current - Valley (Iv)
Pass
Current - Peak
Pass
Mounting Type
Through Hole

Packaging and delivery

Selling Units
Single item
Single package size
10X10X5 cm
Single gross weight
0.89 kg

Lead time

Product descriptions from the supplier

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Warning/Disclaimer
California Proposition 65 Consumer Warning
This product has acquired the relevant product qualification(s)/license(s) of certain applicable country/countries.