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IMZA65R026M2HXKSA1 for CoolSiC MOS FETs 650 V 26 Mohm G2 High Performance IGBT Transistor for Power Amplifiers and Components

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ATRIX SEMICONDUCTOR PTE LTD
1 yr
SG

Key attributes

Model Number
IMZA65R026M2HXKSA1
Type
Transistor
Brand Name
Infi neon
Package Type
Through Hole
Description
IMZA65R026M2HXKSA1
Place of Origin
ORIGINAL
Package / Case
TO-247-4
Operating Temperature
-55°C ~ 150°C (TJ)
Series
650V G2
D/C
Newest
Application
General Purpose
Supplier Type
Original Manufacturer, ODM, Agency, Retailer
Cross Reference
Transistor
Media Available
Datasheet, Photo, EDA/CAD Models
Current - Collector (Ic) (Max)
STANDARD
Voltage - Collector Emitter Breakdown (max)
STANDARD
Vce Saturation (Max) @ Ib, Ic
STANDARD
Current - Collector Cutoff (Max)
STANDARD
DC Current Gain (hFE) (Min) @ Ic, Vce
STANDARD
Power - Max
STANDARD
Frequency - Transition
STANDARD
Mounting Type
STANDARD
Resistor - Base (R1)
STANDARD
Resistor - Emitter Base (R2)
STANDARD
FET Type
N-Channel
Drain to Source Voltage (Vdss)
75V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @@ 40A 10V
Vgs(th) (Max) @ Id
4V @@ 250ua
Gate Charge (Qg) (Max) @ Vgs
160nC @@ 10V
Input Capacitance (Ciss) (Max) @ Vds
3700pF @@ 25V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Through Hole

Packaging and delivery

Selling Units
Single item
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Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
1 - 99 pieces
$13.90
100 - 479 pieces
$8.78
>= 480 pieces
$7.81

Variations

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