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IMZA65R026M2HXKSA1 for MOS FETs 75V 26 Mohm G2 High Performance IGBT Transistor Power Amplifiers Components Agency

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$1390
1 - 99 pieces
$878
100 - 479 pieces
$781
≥ 480 pieces

Specification

STANDARD

Key attributes

Manufacturer Part Number

IMZA65R026M2HXKSA1

Type

Transistor

Brand Name

Infi neon

Package Type

Through Hole

Description

IMZA65R026M2HXKSA1

Place of Origin

Other

Shipping

Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.

Key attributes

Type
Transistor
Application
General Purpose
Package Type
Through Hole
Mounting Type
STANDARD
Media Available
Datasheet, Photo, EDA/CAD Models
Supplier Type
Original Manufacturer, ODM, Agency, Retailer
Power - Max
STANDARD
Package / Case
TO-247-4
Description
IMZA65R026M2HXKSA1
Manufacturer Part Number
IMZA65R026M2HXKSA1
Brand Name
Infi neon
Place of Origin
ORIGINAL
Operating Temperature
-55°C ~ 150°C (TJ)
Series
650V G2
Mfg Date Code
Newest
Cross Reference
Transistor
Current - Collector (Ic) (Max)
STANDARD
Voltage - Collector Emitter Breakdown (max)
STANDARD
Vce Saturation (Max) @ Ib, Ic
STANDARD
Current - Collector Cutoff (Max)
STANDARD
DC Current Gain (hFE) (Min) @ Ic, Vce
STANDARD
Frequency - Transition
STANDARD
Resistor - Base (R1)
STANDARD
Resistor - Emitter Base (R2)
STANDARD
FET Type
N-Channel
Drain to Source Voltage (Vdss)
75V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
11mOhm @@ 40A 10V
Vgs(th) (Max) @ Id
4V @@ 250ua
Gate Charge (Qg) (Max) @ Vgs
160nC @@ 10V
Input Capacitance (Ciss) (Max) @ Vds
3700pF @@ 25V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Through Hole

Packaging and delivery

Selling Units
Single item

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning