Name: IMZA65R026M2HXKSA1 for MOS FETs 75V 26 Mohm G2 High Performance IGBT Transistor Power Amplifiers Components Agency
Brand: ATRIX SEMICONDUCTOR PTE LTD
SKU: 1601565651174
Price: 7.81 USD
Availability: InStock

Key attributes

Type

Transistor

Application

General Purpose

Package Type

Through Hole

Mounting Type

STANDARD

Media Available

Datasheet, Photo, EDA/CAD Models

Supplier Type

Original Manufacturer, ODM, Agency, Retailer

Power - Max

STANDARD

Package / Case

TO-247-4

Description

IMZA65R026M2HXKSA1

Manufacturer Part Number

IMZA65R026M2HXKSA1

Brand Name

Infi neon

Place of Origin

ORIGINAL

Operating Temperature

-55°C ~ 150°C (TJ)

Series

650V G2

Mfg Date Code

Newest

Cross Reference

Transistor

Current - Collector (Ic) (Max)

STANDARD

Voltage - Collector Emitter Breakdown (max)

STANDARD

Vce Saturation (Max) @ Ib, Ic

STANDARD

Current - Collector Cutoff (Max)

STANDARD

DC Current Gain (hFE) (Min) @ Ic, Vce

STANDARD

Frequency - Transition

STANDARD

Resistor - Base (R1)

STANDARD

Resistor - Emitter Base (R2)

STANDARD

FET Type

N-Channel

Drain to Source Voltage (Vdss)

75V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Rds On (Max) @ Id, Vgs

11mOhm @@ 40A 10V

Vgs(th) (Max) @ Id

4V @@ 250ua

Gate Charge (Qg) (Max) @ Vgs

160nC @@ 10V

Input Capacitance (Ciss) (Max) @ Vds

3700pF @@ 25V

Drive Voltage (Max Rds On, Min Rds On)

10V

Vgs (Max)

±20V

Mounting Type

Through Hole

Packaging and delivery

Selling Units

Single item

Lead time

Product descriptions from the supplier

Report abuse

Warning/Disclaimer

California Proposition 65 Consumer WarningView more

Quantity (pieces)	1 - 411	> 411
Lead time (days)	1	To be negotiated

IMZA65R026M2HXKSA1 for MOS FETs 75V 26 Mohm G2 High Performance IGBT Transistor Power Amplifiers Components Agency

Specification

Key attributes

Shipping

Key attributes

Packaging and delivery

Lead time

Product descriptions from the supplier

Specification

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