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In Stock M30162040108X0IWAR 8 WDFN Exposed Pad Memory Electronic Circuit Components

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Attributes

Component & PartType
NewManufacturing Date Code
16MbitMemory Size
ChinaPlace of Origin
Tape & Reel (TR)Packaging Type
MemoryApplication
Features:Electronic Components Integrated Circuit
Memory Type:Non-Volatile
Technology:MRAM (Magnetoresistive RAM)
Voltage - Supply:2.7V ~ 3.6V
Clock Frequency:108 MHz
Memory Organization:4M x 4
Write Cycle Time - Word, Page:-
Memory Interface:-

Key attributes

Type
Component & Part
Manufacturing Date Code
New
Memory Size
16Mbit
Place of Origin
China
Packaging Type
Tape & Reel (TR)
Application
Memory
Features
Electronic Components Integrated Circuit
Memory Type
Non-Volatile
Technology
MRAM (Magnetoresistive RAM)
Voltage - Supply
2.7V ~ 3.6V
Clock Frequency
108 MHz
Memory Organization
4M x 4
Write Cycle Time - Word, Page
-
Memory Interface
-

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
4000 - 6999 pieces
$1385
>= 7000 pieces
$693

Variations

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Shipping

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