





Attributes
Component & PartType
NewManufacturing Date Code
18MbitMemory Size
ChinaPlace of Origin
BagPackaging Type
MemoryApplication
Features:Electronic Circuit Components
Memory Type:VOLATILE
Technology:SRAM - Synchronous, QDR II
Voltage - Supply:1.7V ~ 1.9V
Clock Frequency:250 MHz
Memory Organization:1M x 18
Write Cycle Time - Word, Page:-
Memory Interface:Parallel














