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Memory 165 LBGA CY7C1313SV18-250BZC Electronic Chips Component Manufacturer Channel

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Attributes

Component & PartType
NewManufacturing Date Code
18MbitMemory Size
ChinaPlace of Origin
BagPackaging Type
MemoryApplication
Features:Electronic Circuit Components
Memory Type:VOLATILE
Technology:SRAM - Synchronous, QDR II
Voltage - Supply:1.7V ~ 1.9V
Clock Frequency:250 MHz
Memory Organization:1M x 18
Write Cycle Time - Word, Page:-
Memory Interface:Parallel

Key attributes

Type
Component & Part
Manufacturing Date Code
New
Memory Size
18Mbit
Place of Origin
China
Packaging Type
Bag
Application
Memory
Features
Electronic Circuit Components
Memory Type
VOLATILE
Technology
SRAM - Synchronous, QDR II
Voltage - Supply
1.7V ~ 1.9V
Clock Frequency
250 MHz
Memory Organization
1M x 18
Write Cycle Time - Word, Page
-
Memory Interface
Parallel

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
1 - 3000 pieces
$26.82
>= 3001 pieces
$13.41

Variations

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Shipping

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