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Memory GD5F2GQ5UEYIHR 8 WDFN Exposed Pad Electronic Circuit Components Manufacturer Channel

Store rating:4.6
(3 reviews)

Attributes

FLASH - NAND (SLC)Technology
Non-VolatileMemory Type
512M x 4Memory Organization
Component & PartType
2GbitMemory Size
ChinaPlace of Origin
Packaging Type:Tape & Reel (TR)
Application:Memory
Features:Electronic Components Integrated Circuit
Voltage - Supply:2.7V ~ 3.6V
Clock Frequency:104 MHz
Write Cycle Time - Word, Page:600µs
Memory Interface:SPI - Quad I/O, QPI, DTR

Key attributes

Technology
FLASH - NAND (SLC)
Memory Type
Non-Volatile
Memory Organization
512M x 4
Type
Component & Part
Memory Size
2Gbit
Place of Origin
China
Packaging Type
Tape & Reel (TR)
Application
Memory
Features
Electronic Components Integrated Circuit
Voltage - Supply
2.7V ~ 3.6V
Clock Frequency
104 MHz
Write Cycle Time - Word, Page
600µs
Memory Interface
SPI - Quad I/O, QPI, DTR

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.100 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
3,000 - 5,999 pieces
$1.94
>= 6,000 pieces
$0.97

Variations

Select now

Specification

GD5F2GQ5UEYIHR

Shipping

Shipping fee and delivery date to be negotiated. Chat with supplier now for more details.
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