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NDB6060L NDB6060 MOSFET Transistor IC N-Channel 60V 60A High Current Low On-Resistance Power Field Effect Transistor NDB6060L

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$0.40-1.70
Minimum order quantity: 1 piece
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规格

NDB6060L

Key attributes

Manufacturer Part Number

NDB6060L

Type

MOSFET

Brand Name

Original

Package Type

Standard

Description

High Current Low On-Resistance Power Field Effect Transistor

Place of Origin

Other

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Key attributes

Manufacturer Part Number
NDB6060L
Type
MOSFET 
Brand Name
Original
Package Type
Standard
Description
High Current Low On-Resistance Power Field Effect Transistor
Place of Origin
Original
Package / Case
Standard
Operating Temperature
/
Series
NDB6060L
Mfg Date Code
/
Application
/
Cross Reference
/
Current - Collector (Ic) (Max)
/
Voltage - Collector Emitter Breakdown (max)
/
Vce Saturation (Max) @ Ib, Ic
/
Current - Collector Cutoff (Max)
/
DC Current Gain (hFE) (Min) @ Ic, Vce
/
Power - Max
/
Frequency - Transition
/
Resistor - Base (R1)
/
Resistor - Emitter Base (R2)
/
FET Type
/
FET Feature
/
Drain to Source Voltage (Vdss)
/
Current - Continuous Drain (Id) @ 25°C
/
Rds On (Max) @ Id, Vgs
/
Vgs(th) (Max) @ Id
/
Gate Charge (Qg) (Max) @ Vgs
/
Input Capacitance (Ciss) (Max) @ Vds
/
Frequency
/
Current Rating (Amps)
/
Noise Figure
/
Power - Output
/
Voltage - Rated
/
Drive Voltage (Max Rds On, Min Rds On)
/
Vgs (Max)
/
IGBT Type
/
Configuration
/
Vce(on) (Max) @ Vge, Ic
/
Input Capacitance (Cies) @ Vce
/
Input
/
NTC Thermistor
/
Voltage - Breakdown (V(BR)GSS)
/
Current - Drain (Idss) @ Vds (Vgs=0)
/
Current Drain (Id) - Max
/
Voltage - Cutoff (VGS off) @ Id
/
Resistance - RDS(On)
/
Voltage - Output
/
Voltage - Offset (Vt)
/
Current - Gate to Anode Leakage (Igao)
/
Current - Valley (Iv)
/
Current - Peak
/
Transistor Type
/
Mounting Type
/

Packaging and delivery

Selling Units
Single item

Lead time

Product descriptions from the supplier

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Warning/Disclaimer
California Proposition 65 Consumer Warning