Attributes
A1941Model Number
Bipolar TransistorType
ToshibaBrand Name
Throught HolePackage Type
A1941 1941 PNP Transistor 140V 10A 100W Audio Power Amplifier Transistor To-3P PackageDescription
JapanPlace of Origin
Package / Case:TO-3P
Operating Temperature:-55 to +l50 Celsius
Series:A1941
D/C:A1941
Application:General Purpose
Supplier Type:Agency
Media Available:Photo
Current - Collector (Ic) (Max):10A
Voltage - Collector Emitter Breakdown (max):140V
Vce Saturation (Max) @ Ib, Ic:A1941
DC Current Gain (hFE) (Min) @ Ic, Vce:A1941
Power - Max:A1941
Frequency - Transition:A1941
Mounting Type:Through Hole
Resistor - Base (R1):A1941
Resistor - Emitter Base (R2):A1941
FET Type:PNP
FET Feature:A1941
Drain to Source Voltage (Vdss):A1941
Current - Continuous Drain (Id) @ 25°C:A1941
Rds On (Max) @ Id, Vgs:A1941
Vgs(th) (Max) @ Id:A1941
Gate Charge (Qg) (Max) @ Vgs:A1941
Input Capacitance (Ciss) (Max) @ Vds:A1941
Frequency:A1941
Current Rating (Amps):A1941
Noise Figure:A1941
Power - Output:A1941
Voltage - Rated:A1941
Drive Voltage (Max Rds On, Min Rds On):A1941
Vgs (Max):A1941
IGBT Type:A1941
Configuration:A1941
Vce(on) (Max) @ Vge, Ic:A1941
Input Capacitance (Cies) @ Vce:A1941
Input:A1941
NTC Thermistor:A1941
Voltage - Breakdown (V(BR)GSS):A1941
Current - Drain (Idss) @ Vds (Vgs=0):A1941
Current Drain (Id) - Max:A1941
Voltage - Cutoff (VGS off) @ Id:A1941
Resistance - RDS(On):A1941
Voltage - Output:A1941
Voltage - Offset (Vt):A1941
Current - Gate to Anode Leakage (Igao):A1941
Current - Valley (Iv):A1941
Current - Peak:A1941
Transistor Type:PNP
