Attributes
C3M0065100KModel Number
TRANSISTORType
Throught HolePackage Type
SICFET N-CH 1000V 35A TO247-4LDescription
ChinaPlace of Origin
TO-247-4Package / Case
Operating Temperature:-55°C ~ 150°C (TJ)
Series:C3M
D/C:15V
Application:Industrial
Supplier Type:Agency
Media Available:Datasheet
Current - Collector (Ic) (Max):35A
Voltage - Collector Emitter Breakdown (max):35 nC @ 15 V
Vce Saturation (Max) @ Ib, Ic:78mOhm @ 20A, 15V
Current - Collector Cutoff (Max):35A (Tc)
DC Current Gain (hFE) (Min) @ Ic, Vce:3.5V @ 5mA
Power - Max:113.5 W
Frequency - Transition:5011 pF
Mounting Type:Through Hole
FET Type:MOSFETs
FET Feature:Silicon Carbide (SiC)
Drain to Source Voltage (Vdss):C3M0065100K
Current - Continuous Drain (Id) @ 25°C:C3M0065100K
Rds On (Max) @ Id, Vgs:C3M0065100K
Vgs(th) (Max) @ Id:C3M0065100K
Gate Charge (Qg) (Max) @ Vgs:C3M0065100K
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 600 V
Frequency:C3M0065100K
Current Rating (Amps):C3M0065100K
Noise Figure:C3M0015065K
Power - Output:C3M0065100K
Voltage - Rated:C3M0065100K
Drive Voltage (Max Rds On, Min Rds On):C3M0065100K
Vgs (Max):C3M0065100K
IGBT Type:C3M0065100K
Configuration:Single
Vce(on) (Max) @ Vge, Ic:C3M0065100K
Input Capacitance (Cies) @ Vce:C3M0065100K
Input:C3M0065100K
NTC Thermistor:C3M0065100K
Voltage - Breakdown (V(BR)GSS):C3M0065100K
Current - Drain (Idss) @ Vds (Vgs=0):C3M0065100K
Current Drain (Id) - Max:C3M0065100K
Voltage - Cutoff (VGS off) @ Id:C3M0065100K
Resistance - RDS(On):C3M0065100K
Voltage - Output:C3M0065100K
Voltage - Offset (Vt):C3M0065100K
Current - Gate to Anode Leakage (Igao):C3M0065100K
Current - Valley (Iv):C3M0065100K
Current - Peak:C3M0065100K
Transistor Type:SiC MOSFETs
Mounting Type:Through Hole
Type:Field-Effect Transistor
Package / Case:TO-220-3
Series:STripFE
D/C:Newest
Payment:Paypal\TT\Western Union\Trade Assurance
Package:Reel
Configuration:Single
Product Name:Transistor IC Electronic Component
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Service:Bom List
