Attributes
PSMN2R4-30YLDModel Number
MOSFET Type
ORIGINALBrand Name
Throught HolePackage Type
N-Channel 30 V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8Description
MalaysiaPlace of Origin
Package / Case:SC-100, SOT-669
D/C:-
Application:-
Voltage - Collector Emitter Breakdown (max):-
Vce Saturation (Max) @ Ib, Ic:-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Mounting Type:-
Resistor - Base (R1):-
Resistor - Emitter Base (R2):-
FET Feature:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Frequency:-
Current Rating (Amps):-
Noise Figure:-
Power - Output:-
Voltage - Rated:-
Drive Voltage (Max Rds On, Min Rds On):-
Vgs (Max):-
IGBT Type:-
Configuration:-
Vce(on) (Max) @ Vge, Ic:-
Input Capacitance (Cies) @ Vce:-
Input:-
NTC Thermistor:-
Voltage - Breakdown (V(BR)GSS):-
Current - Drain (Idss) @ Vds (Vgs=0):-
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:-
Resistance - RDS(On):-
Voltage - Output:-
Voltage - Offset (Vt):-
Current - Gate to Anode Leakage (Igao):-
Current - Valley (Iv):-
Current - Peak:-
Transistor Type:-
