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SP010N01BGHTO SP010N01 MOSFET Transistor Power Switching Integrated Circuit Chip SP010N01BGHTO

Store rating:4.6
(197 reviews)

Attributes

MOSFET Type
MOSFET TransistorApplication
StandardPackage Type
/Mounting Type
/FET Feature
/Configuration
Media Available:/
Supplier Type:/
Power - Max:/
Package / Case:TOLL-8L
Description:MOSFET Transistor Power Switching Integrated Circuit Chip
Manufacturer Part Number:SP010N01BGHTO
Brand Name:Original
Place of Origin:Original
Operating Temperature:/
Series:SP010N01BGHTO
Mfg Date Code:22+
Cross Reference:/
Current - Collector (Ic) (Max):/
Voltage - Collector Emitter Breakdown (max):/
Vce Saturation (Max) @ Ib, Ic:/
Current - Collector Cutoff (Max):/
DC Current Gain (hFE) (Min) @ Ic, Vce:/
Frequency - Transition:/
Resistor - Base (R1):/
Resistor - Emitter Base (R2):/
FET Type:/
Drain to Source Voltage (Vdss):/
Current - Continuous Drain (Id) @ 25°C:/
Rds On (Max) @ Id, Vgs:/
Vgs(th) (Max) @ Id:/
Gate Charge (Qg) (Max) @ Vgs:/
Input Capacitance (Ciss) (Max) @ Vds:/
Frequency:/
Current Rating (Amps):/
Noise Figure:/
Power - Output:/
Voltage - Rated:/
Drive Voltage (Max Rds On, Min Rds On):/
Vgs (Max):/
IGBT Type:/
Vce(on) (Max) @ Vge, Ic:/
Input Capacitance (Cies) @ Vce:/
Input:/
NTC Thermistor:/
Voltage - Breakdown (V(BR)GSS):/
Current - Drain (Idss) @ Vds (Vgs=0):/
Current Drain (Id) - Max:/
Voltage - Cutoff (VGS off) @ Id:/
Resistance - RDS(On):/
Voltage - Output:/
Voltage - Offset (Vt):/
Current - Gate to Anode Leakage (Igao):/
Current - Valley (Iv):/
Current - Peak:/
Transistor Type:/

Key attributes

Type
MOSFET 
Application
MOSFET Transistor
Package Type
Standard
Mounting Type
/
FET Feature
/
Configuration
/
Media Available
/
Supplier Type
/
Power - Max
/
Package / Case
TOLL-8L
Description
MOSFET Transistor Power Switching Integrated Circuit Chip
Manufacturer Part Number
SP010N01BGHTO
Brand Name
Original
Place of Origin
Original
Operating Temperature
/
Series
SP010N01BGHTO
Mfg Date Code
22+
Cross Reference
/
Current - Collector (Ic) (Max)
/
Voltage - Collector Emitter Breakdown (max)
/
Vce Saturation (Max) @ Ib, Ic
/
Current - Collector Cutoff (Max)
/
DC Current Gain (hFE) (Min) @ Ic, Vce
/
Frequency - Transition
/
Resistor - Base (R1)
/
Resistor - Emitter Base (R2)
/
FET Type
/
Drain to Source Voltage (Vdss)
/
Current - Continuous Drain (Id) @ 25°C
/
Rds On (Max) @ Id, Vgs
/
Vgs(th) (Max) @ Id
/
Gate Charge (Qg) (Max) @ Vgs
/
Input Capacitance (Ciss) (Max) @ Vds
/
Frequency
/
Current Rating (Amps)
/
Noise Figure
/
Power - Output
/
Voltage - Rated
/
Drive Voltage (Max Rds On, Min Rds On)
/
Vgs (Max)
/
IGBT Type
/
Vce(on) (Max) @ Vge, Ic
/
Input Capacitance (Cies) @ Vce
/
Input
/
NTC Thermistor
/
Voltage - Breakdown (V(BR)GSS)
/
Current - Drain (Idss) @ Vds (Vgs=0)
/
Current Drain (Id) - Max
/
Voltage - Cutoff (VGS off) @ Id
/
Resistance - RDS(On)
/
Voltage - Output
/
Voltage - Offset (Vt)
/
Current - Gate to Anode Leakage (Igao)
/
Current - Valley (Iv)
/
Current - Peak
/
Transistor Type
/
Mounting Type
/

Packaging and delivery

Selling Units
Single item

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
Minimum order quantity: 1 piece
$0.38-2

Variations

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Specification

SP010N01BGHTO

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