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TO-247-4L NVH4L050N170M1 Transistors Electronics Component BOM IC In Stock

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$9.52
100-3,099 pieces
$4.76
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

NVH4L050N170M1

Brand Name

Original

Description

SILICON CARBIDE (SIC) MOSFET ELI

Place of Origin

China

Package / Case

TO-247-4L

Operating Temperature

-55°C ~ 175°C (TJ)

Shipping

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$0.00
Shipping total
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Subtotal
$0.00

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Key attributes

Manufacturer Part Number
NVH4L050N170M1
Brand Name
Original
Description
SILICON CARBIDE (SIC) MOSFET ELI
Place of Origin
China
Package / Case
TO-247-4L
Operating Temperature
-55°C ~ 175°C (TJ)
Series
-
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Rds On (Max) @ Id, Vgs
76mOhm @ 35A, 20V
Vgs(th) (Max) @ Id
4.3V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
105 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
2063 pF @ 1000 V
Drive Voltage (Max Rds On, Min Rds On)
20V
Vgs (Max)
+25V, -15V
Mounting Type
Through Hole
Package
Bulk
FET Type
N-Channel
Technology
SiC (Silicon Carbide Junction Transistor)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

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