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TPW2R508NH,L1Q 8-DSOP Advance Transistors Electronic Chips Component Original

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$2.17
100-3,099 pieces
$1.09
≥3,100 pieces

Quantity

Key attributes

Manufacturer Part Number

TPW2R508NH,L1Q

Brand Name

Original

Description

PB-F POWER MOSFET TRANSISTOR DOS

Place of Origin

China

Package / Case

8-DSOP Advance

Operating Temperature

150°C

Shipping
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Item subtotal
$0.00
Shipping total
To be negotiated
Subtotal
$0.00

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Key attributes

Manufacturer Part Number
TPW2R508NH,L1Q
Brand Name
Original
Description
PB-F POWER MOSFET TRANSISTOR DOS
Place of Origin
China
Package / Case
8-DSOP Advance
Operating Temperature
150°C
Series
U-MOSVIII-H
Mfg Date Code
NEW
FET Type
N-Channel
FET Feature
-
Drain to Source Voltage (Vdss)
75 V
Current - Continuous Drain (Id) @ 25°C
150A (Ta)
Rds On (Max) @ Id, Vgs
2.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
6000 pF @ 37.5 V
Drive Voltage (Max Rds On, Min Rds On)
10V
Vgs (Max)
±20V
Mounting Type
Surface Mount
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)

Packaging and delivery

Selling Units
Single item
Single package size
1X1X1 cm
Single gross weight
0.1 kg

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning