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Xingyuan Bipolar Transistors - BJT 40V NPN LOW VCE(SAT) XTR NSV40201LT1G

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Shenzhen Xingyuan Microelectronics Co., Ltd.
Multispecialty Supplier
3 yrs
CN

Attributes

NSV40201LT1GModel Number
standardType
originalBrand Name
standardPackage Type
standardDescription
originalPlace of Origin
Package / Case:standard
Operating Temperature:-
Series:standard
D/C:New
Application:standard
Supplier Type:-
Cross Reference:-
Media Available:-
Current - Collector (Ic) (Max):-
Voltage - Collector Emitter Breakdown (max):-
Vce Saturation (Max) @ Ib, Ic:-
Current - Collector Cutoff (Max):-
DC Current Gain (hFE) (Min) @ Ic, Vce:-
Power - Max:-
Frequency - Transition:-
Mounting Type:SOT-23-3, SOT-23-3
Resistor - Base (R1):-
Resistor - Emitter Base (R2):-
FET Type:-
FET Feature:-
Drain to Source Voltage (Vdss):-
Current - Continuous Drain (Id) @ 25°C:-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:-
Gate Charge (Qg) (Max) @ Vgs:-
Input Capacitance (Ciss) (Max) @ Vds:-
Frequency:-
Current Rating (Amps):-
Noise Figure:-
Power - Output:-
Voltage - Rated:-
Drive Voltage (Max Rds On, Min Rds On):-
Vgs (Max):-
IGBT Type:BJT
Configuration:-
Vce(on) (Max) @ Vge, Ic:-
Input Capacitance (Cies) @ Vce:-
Input:-
NTC Thermistor:-
Voltage - Breakdown (V(BR)GSS):-
Current - Drain (Idss) @ Vds (Vgs=0):-
Current Drain (Id) - Max:-
Voltage - Cutoff (VGS off) @ Id:-
Resistance - RDS(On):-
Voltage - Output:-
Voltage - Offset (Vt):-
Current - Gate to Anode Leakage (Igao):-
Current - Valley (Iv):-
Current - Peak:-
Transistor Type:BJT
Part number::NSV40201LT1G
Technology::Si
Collector- Base Voltage VCBO::40 V
Package / Case::SOT-23-3
Transistor Polarity::NPN
Configuration::Single
Maximum DC Collector Current::2 A
Collector- Emitter Voltage VCEO Max::40 V

Key attributes

Model Number
NSV40201LT1G
Type
standard
Brand Name
original
Package Type
standard
Description
standard
Place of Origin
original
Package / Case
standard
Operating Temperature
-
Series
standard
D/C
New
Application
standard
Supplier Type
-
Cross Reference
-
Media Available
-
Current - Collector (Ic) (Max)
-
Voltage - Collector Emitter Breakdown (max)
-
Vce Saturation (Max) @ Ib, Ic
-
Current - Collector Cutoff (Max)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
-
Power - Max
-
Frequency - Transition
-
Mounting Type
SOT-23-3, SOT-23-3
Resistor - Base (R1)
-
Resistor - Emitter Base (R2)
-
FET Type
-
FET Feature
-
Drain to Source Voltage (Vdss)
-
Current - Continuous Drain (Id) @ 25°C
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
-
Frequency
-
Current Rating (Amps)
-
Noise Figure
-
Power - Output
-
Voltage - Rated
-
Drive Voltage (Max Rds On, Min Rds On)
-
Vgs (Max)
-
IGBT Type
BJT
Configuration
-
Vce(on) (Max) @ Vge, Ic
-
Input Capacitance (Cies) @ Vce
-
Input
-
NTC Thermistor
-
Voltage - Breakdown (V(BR)GSS)
-
Current - Drain (Idss) @ Vds (Vgs=0)
-
Current Drain (Id) - Max
-
Voltage - Cutoff (VGS off) @ Id
-
Resistance - RDS(On)
-
Voltage - Output
-
Voltage - Offset (Vt)
-
Current - Gate to Anode Leakage (Igao)
-
Current - Valley (Iv)
-
Current - Peak
-
Transistor Type
BJT
Part number:
NSV40201LT1G
Technology:
Si
Collector- Base Voltage VCBO:
40 V
Package / Case:
SOT-23-3
Transistor Polarity:
NPN
Configuration:
Single
Maximum DC Collector Current:
2 A
Collector- Emitter Voltage VCEO Max:
40 V

Packaging and delivery

Selling Units
Single item

Lead time

Product descriptions from the supplier

Warning/Disclaimer
California Proposition 65 Consumer Warning
Minimum order quantity: 10 pieces
$0.10-1

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