Attributes
MMBT2222ALT1Model Number
Transistor - Bipolar Transistor (BJT) - SingleType
GoldelewayBrand Name
Surface MountPackage Type
standardDescription
Guangdong, ChinaPlace of Origin
Package / Case:TO-236-3, SC-59, SOT-23-3
D/C:/
Application:/
Supplier Type:Other
Cross Reference:/
Media Available:Other
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA,500mA
Current - Collector Cutoff (Max):10nA(ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA,10V
Power - Max:225 mW
Frequency - Transition:300MHz
Mounting Type:Surface Mount
Resistor - Base (R1):/
Resistor - Emitter Base (R2):/
FET Type:/
FET Feature:/
Drain to Source Voltage (Vdss):/
Current - Continuous Drain (Id) @ 25°C:/
Rds On (Max) @ Id, Vgs:/
Vgs(th) (Max) @ Id:/
Gate Charge (Qg) (Max) @ Vgs:/
Input Capacitance (Ciss) (Max) @ Vds:/
Frequency:/
Current Rating (Amps):/
Noise Figure:/
Power - Output:/
Voltage - Rated:/
Drive Voltage (Max Rds On, Min Rds On):/
Vgs (Max):/
IGBT Type:/
Configuration:/
Vce(on) (Max) @ Vge, Ic:/
Input Capacitance (Cies) @ Vce:/
Input:/
NTC Thermistor:/
Voltage - Breakdown (V(BR)GSS):/
Current - Drain (Idss) @ Vds (Vgs=0):/
Current Drain (Id) - Max:/
Voltage - Cutoff (VGS off) @ Id:/
Resistance - RDS(On):/
Voltage - Output:/
Voltage - Offset (Vt):/
Current - Gate to Anode Leakage (Igao):/
Current - Valley (Iv):/
Current - Peak:/
Mounting Type:standard
Application:Computer
Supply Voltage:Voltage
Shipping by:DHL\UPS\Fedex\EMS\HK Post
Packing:Sealed
Packaging:Safe
Operating Temperature:-55°C ~ 150°C(TJ)
Description:/
Voltage:/
Applications:/
