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Discreted

(999+ produits disponibles)

NCE6020AK TO-252 DPAK MOSFET canal N 60V 20A 45W transistor de puissance SMD Discrete Device Original NCE6020 - Product Image 1
NCE6020AK TO-252 DPAK MOSFET canal N 60V 20A 45W transistor de puissance SMD Discrete Device Original NCE6020 - Product Image 2
NCE6020AK TO-252 DPAK MOSFET canal N 60V 20A 45W transistor de puissance SMD Discrete Device Original NCE6020 - Product Image 3
NCE6020AK TO-252 DPAK MOSFET canal N 60V 20A 45W transistor de puissance SMD Discrete Device Original NCE6020 - Product Image 4
NCE6020AK TO-252 DPAK MOSFET canal N 60V 20A 45W transistor de puissance SMD Discrete Device Original NCE6020 - Product Image 5
NCE6020AK TO-252 DPAK MOSFET canal N 60V 20A 45W transistor de puissance SMD Discrete Device Original NCE6020 - Product Image 6

NCE6020AK TO-252 DPAK MOSFET canal N 60V 20A 45W transistor de puissance SMD Discrete Device Original NCE6020

0,0524-0,1047 €
quantité minimum: 1 pièce
HONGKONG SMARE TRADING LIMITED
1 yrsHK flagHK5.0/5.0(3)
BC817-16,215 SOT-23 BJT NPN 500mA 45V 250mW 100MHz SMD Dispositif discret BC817-16 de transistor bipolaire d'origine BC817 - Product Image 1
BC817-16,215 SOT-23 BJT NPN 500mA 45V 250mW 100MHz SMD Dispositif discret BC817-16 de transistor bipolaire d'origine BC817 - Product Image 2
BC817-16,215 SOT-23 BJT NPN 500mA 45V 250mW 100MHz SMD Dispositif discret BC817-16 de transistor bipolaire d'origine BC817 - Product Image 3
BC817-16,215 SOT-23 BJT NPN 500mA 45V 250mW 100MHz SMD Dispositif discret BC817-16 de transistor bipolaire d'origine BC817 - Product Image 4
BC817-16,215 SOT-23 BJT NPN 500mA 45V 250mW 100MHz SMD Dispositif discret BC817-16 de transistor bipolaire d'origine BC817 - Product Image 5
BC817-16,215 SOT-23 BJT NPN 500mA 45V 250mW 100MHz SMD Dispositif discret BC817-16 de transistor bipolaire d'origine BC817 - Product Image 6

BC817-16,215 SOT-23 BJT NPN 500mA 45V 250mW 100MHz SMD Dispositif discret BC817-16 de transistor bipolaire d'origine BC817

0,0066-0,0105 €
quantité minimum: 1 pièce
HONGKONG SMARE TRADING LIMITED
1 yrsHK flagHK5.0/5.0(3)
IRF740PBF TO-220 MOSFET canal N 400V 10A 125W 550mOhm trou traversant en stock dispositif discret IRF740 - Product Image 1
IRF740PBF TO-220 MOSFET canal N 400V 10A 125W 550mOhm trou traversant en stock dispositif discret IRF740 - Product Image 2
IRF740PBF TO-220 MOSFET canal N 400V 10A 125W 550mOhm trou traversant en stock dispositif discret IRF740 - Product Image 3
IRF740PBF TO-220 MOSFET canal N 400V 10A 125W 550mOhm trou traversant en stock dispositif discret IRF740 - Product Image 4
IRF740PBF TO-220 MOSFET canal N 400V 10A 125W 550mOhm trou traversant en stock dispositif discret IRF740 - Product Image 5
IRF740PBF TO-220 MOSFET canal N 400V 10A 125W 550mOhm trou traversant en stock dispositif discret IRF740 - Product Image 6

IRF740PBF TO-220 MOSFET canal N 400V 10A 125W 550mOhm trou traversant en stock dispositif discret IRF740

0,2747-0,327 €
quantité minimum: 1 unité
HONGKONG SMARE TRADING LIMITED
1 yrsHK flagHK5.0/5.0(3)
MMBTA06LT1G SOT-23 BJT NPN Transistor bipolaire 500mA 80V 225mW 100MHz Original instock SMD Discret Device MMBTA06 - Product Image 1
MMBTA06LT1G SOT-23 BJT NPN Transistor bipolaire 500mA 80V 225mW 100MHz Original instock SMD Discret Device MMBTA06 - Product Image 2
MMBTA06LT1G SOT-23 BJT NPN Transistor bipolaire 500mA 80V 225mW 100MHz Original instock SMD Discret Device MMBTA06 - Product Image 3
MMBTA06LT1G SOT-23 BJT NPN Transistor bipolaire 500mA 80V 225mW 100MHz Original instock SMD Discret Device MMBTA06 - Product Image 4
MMBTA06LT1G SOT-23 BJT NPN Transistor bipolaire 500mA 80V 225mW 100MHz Original instock SMD Discret Device MMBTA06 - Product Image 5
MMBTA06LT1G SOT-23 BJT NPN Transistor bipolaire 500mA 80V 225mW 100MHz Original instock SMD Discret Device MMBTA06 - Product Image 6

MMBTA06LT1G SOT-23 BJT NPN Transistor bipolaire 500mA 80V 225mW 100MHz Original instock SMD Discret Device MMBTA06

0,0105-0,0197 €
quantité minimum: 1 pièce
HONGKONG SMARE TRADING LIMITED
1 yrsHK flagHK5.0/5.0(3)
TIP42C TO-220 BJT transistor bipolaire de puissance PNP 9A 100V 65W Original instock Through Hole Discret Device - Product Image 1
TIP42C TO-220 BJT transistor bipolaire de puissance PNP 9A 100V 65W Original instock Through Hole Discret Device - Product Image 2
TIP42C TO-220 BJT transistor bipolaire de puissance PNP 9A 100V 65W Original instock Through Hole Discret Device - Product Image 3
TIP42C TO-220 BJT transistor bipolaire de puissance PNP 9A 100V 65W Original instock Through Hole Discret Device - Product Image 4
TIP42C TO-220 BJT transistor bipolaire de puissance PNP 9A 100V 65W Original instock Through Hole Discret Device - Product Image 5
TIP42C TO-220 BJT transistor bipolaire de puissance PNP 9A 100V 65W Original instock Through Hole Discret Device - Product Image 6

TIP42C TO-220 BJT transistor bipolaire de puissance PNP 9A 100V 65W Original instock Through Hole Discret Device

0,1701-0,327 €
quantité minimum: 1 pièce
HONGKONG SMARE TRADING LIMITED
1 yrsHK flagHK5.0/5.0(3)
IMSQ120R026M2HHXUMA1 SIC DISCRETE Neuf d'origine En stock - Product Image 1
IMSQ120R026M2HHXUMA1 SIC DISCRETE Neuf d'origine En stock - Product Image 2
IMSQ120R026M2HHXUMA1 SIC DISCRETE Neuf d'origine En stock - Product Image 3
IMSQ120R026M2HHXUMA1 SIC DISCRETE Neuf d'origine En stock - Product Image 4
IMSQ120R026M2HHXUMA1 SIC DISCRETE Neuf d'origine En stock - Product Image 5
IMSQ120R026M2HHXUMA1 SIC DISCRETE Neuf d'origine En stock - Product Image 6

IMSQ120R026M2HHXUMA1 SIC DISCRETE Neuf d'origine En stock

0,1734-0,867 €
quantité minimum: 10 pièces
ApexCore HK Technology Limited
1 yrsHK flagHK4.6/5.0(9)
PBSS4160T,215 SOT-23 BJT NPN 1A 60V 400mW 220MHz Dispositif discret SMD Transistor bipolaire Original PBSS4160T - Product Image 1
PBSS4160T,215 SOT-23 BJT NPN 1A 60V 400mW 220MHz Dispositif discret SMD Transistor bipolaire Original PBSS4160T - Product Image 2
PBSS4160T,215 SOT-23 BJT NPN 1A 60V 400mW 220MHz Dispositif discret SMD Transistor bipolaire Original PBSS4160T - Product Image 3
PBSS4160T,215 SOT-23 BJT NPN 1A 60V 400mW 220MHz Dispositif discret SMD Transistor bipolaire Original PBSS4160T - Product Image 4
PBSS4160T,215 SOT-23 BJT NPN 1A 60V 400mW 220MHz Dispositif discret SMD Transistor bipolaire Original PBSS4160T - Product Image 5
PBSS4160T,215 SOT-23 BJT NPN 1A 60V 400mW 220MHz Dispositif discret SMD Transistor bipolaire Original PBSS4160T - Product Image 6

PBSS4160T,215 SOT-23 BJT NPN 1A 60V 400mW 220MHz Dispositif discret SMD Transistor bipolaire Original PBSS4160T

0,0393-0,0916 €
quantité minimum: 1 pièce
HONGKONG SMARE TRADING LIMITED
1 yrsHK flagHK5.0/5.0(3)
STK184N4F7AG DISCRETE, puce IC d'origine neuve en stock - Product Image 1
STK184N4F7AG DISCRETE, puce IC d'origine neuve en stock - Product Image 2
STK184N4F7AG DISCRETE, puce IC d'origine neuve en stock - Product Image 3
STK184N4F7AG DISCRETE, puce IC d'origine neuve en stock - Product Image 4
STK184N4F7AG DISCRETE, puce IC d'origine neuve en stock - Product Image 5
STK184N4F7AG DISCRETE, puce IC d'origine neuve en stock - Product Image 6

STK184N4F7AG DISCRETE, puce IC d'origine neuve en stock

0,1734-0,867 €
quantité minimum: 10 pièces
ApexCore HK Technology Limited
1 yrsHK flagHK4.6/5.0(9)

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